? 2007 ixys corporation, all rights reserved ds99350a(03/07) g = gate d = drain s = source tab = drain ixys reserves the right to change limits, test conditions, and dimensions. to-264 (ixtk) d s g plus247 (ixtx) (tab) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c 46 a i dm t c = 25 c, pulse width limited by t jm 100 a i ar t c = 25 c 46 a e ar t c = 25 c 60 mj e as 1.5 j p d t c = 25 c 700 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247 tm ) 20...120/4.5...27 n/lb. weight plus247 6 g to-264 10 g n-channel enhancement mode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 1 ma 500 v v gs(th) v ds = v gs , i d = 250 a36v i gss v gs = 30 v, v ds = 0 v 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 20 v, i d = 0.5 i d25 , note 1 0.16 linear power mosfet with extended fbsoa IXTK46N50L ixtx46n50l v dss = 500 v i d25 = 46 a r ds(on) 0.16 features z designed for linear operation z international standard package z unclamped inductive switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification applications z programmable loads z current regulators z dc-dc converters z battery chargers z dc choppers z temperature and lighting controls advantages z easy to mount z space savings z high power density preliminary technical information tab
IXTK46N50L ixtx46n50l ixys reserves the right to change limits, test conditions, and dimensions. note 1: pulse test, t < 300 s, duty cycle, d 2 % symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , note 1 7 10 13 s c iss 7000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 900 pf c rss 170 pf t d(on) 40 ns t r v gs = 15 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 ns t d(off) r g = 2 (external), 80 ns t f 42 ns q g(on) 260 nc q gs v gs = 15 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 85 nc q gd 125 nc r thjc 0.18 c/w r thcs 0.15 c/w safe operating area specification symbol test conditions min. typ. max. soa v ds = 400 v, i d = 0.6 a, t c = 90c 240 w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 46 a i sm repetitive; pulse width limited by t jm 100 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = i s , -di/dt = 100 a/ s, v r = 100v 600 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 (ixtk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus247 tm (ixtx) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2007 ixys corporation, all rights reserved IXTK46N50L ixtx46n50l fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 20v 18v 10v 9v 8v 16v 14v 12v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 024681012141618 v d s - volts i d - amperes v gs = 20v 18v 16v 8v 7v 10v 9v 12 v 14v fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 0123456789 v d s - volts i d - amperes v gs = 20v 18v 16v 9v 8v 7v 10 v 12 v 14 v fig. 4. r ds(on) norm alized to 0.5 i d25 v alue vs. junction temperature 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50-25 0 255075100125150 t j - degrees centigrade r d s (on) - normalized i d = 46a i d = 23a v gs = 20v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 20406080100120 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = 20v
IXTK46N50L ixtx46n50l ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v g s - volts v ds = 250v i d = 23a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 56789101112131415 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 0 10203040506070 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125oc t j = 25oc
? 2007 ixys corporation, all rights reserved IXTK46N50L ixtx46n50l fig. 12. forw ard-bias safe operating area @ t c = 25oc 0.1 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc r ds (on) limit 10ms 25s fig. 13. forw ard-bias safe operating area @ t c = 90oc 0.1 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc r ds (on) limit 10ms 25s fig. 14. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.1 1 10 100 1000 pulse width - milliseconds z (th) j c - (oc/w) ixys ref: t_46n50l (8n) 4-05-07-a.xls
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